Abruptly-Switching MoS₂-Channel Atomic-Threshold-Switching Field-Effect Transistor With AgTi/HfO₂-Based Threshold Switching Device

Sojin Jeong, Sangwoo Han, Ho-Jun Lee, Deokjoon Eom, Gisu Youm, Yejoo Choi, Seungjun Moon, Kyungjin Ahn, Jinju Oh, Changhwan Shin. Abruptly-Switching MoS₂-Channel Atomic-Threshold-Switching Field-Effect Transistor With AgTi/HfO₂-Based Threshold Switching Device. IEEE Access, 9:116953-116961, 2021. [doi]

@article{JeongHLEYCMAOS21,
  title = {Abruptly-Switching MoS₂-Channel Atomic-Threshold-Switching Field-Effect Transistor With AgTi/HfO₂-Based Threshold Switching Device},
  author = {Sojin Jeong and Sangwoo Han and Ho-Jun Lee and Deokjoon Eom and Gisu Youm and Yejoo Choi and Seungjun Moon and Kyungjin Ahn and Jinju Oh and Changhwan Shin},
  year = {2021},
  doi = {10.1109/ACCESS.2021.3106331},
  url = {https://doi.org/10.1109/ACCESS.2021.3106331},
  researchr = {https://researchr.org/publication/JeongHLEYCMAOS21},
  cites = {0},
  citedby = {0},
  journal = {IEEE Access},
  volume = {9},
  pages = {116953-116961},
}