Yibo Jiang, Hui Bi, Hui Li, Zhihao Xu, Cheng Shi. Silicon Controlled Rectifier Based Partially Depleted SOI ESD Protection Device for High Voltage Application. IEICE Trans. Electron., 103-C(4):191-193, 2020. [doi]
@article{JiangBLXS20,
title = {Silicon Controlled Rectifier Based Partially Depleted SOI ESD Protection Device for High Voltage Application},
author = {Yibo Jiang and Hui Bi and Hui Li and Zhihao Xu and Cheng Shi},
year = {2020},
url = {http://search.ieice.org/bin/summary.php?id=e103-c_4_191},
researchr = {https://researchr.org/publication/JiangBLXS20},
cites = {0},
citedby = {0},
journal = {IEICE Trans. Electron.},
volume = {103-C},
number = {4},
pages = {191-193},
}