Hailong Jiao, Volkan Kursun. Ground gated 8T SRAM cells with enhanced read and hold data stability. In IEEE Computer Society Annual Symposium on VLSI, ISVLSI 2013, Natal, Brazil, August 5-7, 2013. pages 52-57, IEEE, 2013. [doi]
@inproceedings{JiaoK13-1,
title = {Ground gated 8T SRAM cells with enhanced read and hold data stability},
author = {Hailong Jiao and Volkan Kursun},
year = {2013},
doi = {10.1109/ISVLSI.2013.6654622},
url = {http://dx.doi.org/10.1109/ISVLSI.2013.6654622},
researchr = {https://researchr.org/publication/JiaoK13-1},
cites = {0},
citedby = {0},
pages = {52-57},
booktitle = {IEEE Computer Society Annual Symposium on VLSI, ISVLSI 2013, Natal, Brazil, August 5-7, 2013},
publisher = {IEEE},
}