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Kangwook Jo, Hongil Yoon. Variation-Tolerant Sensing Circuit for Ultralow-Voltage Operation of Spin-Torque Transfer Magnetic RAM. IEEE Trans. on Circuits and Systems, 64-II(5):570-574, 2017. [doi]
Possibly Related PublicationsThe following publications are possibly variants of this publication: Variation-tolerant and low power look-up table (LUT) using spin-torque transfer magnetic RAM for non-volatile field programmable gate array (FPGA)Kangwook Jo, Kyungseon Cho, Hongil Yoon. isocc 2016: 101-102 [doi] Design Methodologies for STT-MRAM (Spin-Torque Transfer Magnetic Random Access Memory) Sensing CircuitsJisu Kim, Jee-Hwan Song, Seung-Hyuk Kang, Sei Seung Yoon, Seong-Ook Jung. ieicet, 93-C(6):912-921, 2010. [doi]
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