In-depth analysis of the static behaviour of a SiC MOSFET and of its associated parameters using both compact modelling and physical simulation - researchr publication authors

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Wadia Jouha, Ahmed El Oualkadi, Pascal Dherbécourt, Mohamed Masmoudi, Eric Joubert. In-depth analysis of the static behaviour of a SiC MOSFET and of its associated parameters using both compact modelling and physical simulation. IET Circuits, Devices & Systems, 14(2):222-228, 2020. [doi]

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