Two- and three-terminal HfO2-based multilevel resistive memories for neuromorphic analog synaptic elements

Heebum Kang, Jinah Park, Dokyung Lee, Hyun Wook Kim, Sol Jin, Minjoon Ahn, Jiyong Woo. Two- and three-terminal HfO2-based multilevel resistive memories for neuromorphic analog synaptic elements. Neuromorph. Comput. Eng., 1(2):21001, 2021. [doi]

@article{KangPLKJAW21,
  title = {Two- and three-terminal HfO2-based multilevel resistive memories for neuromorphic analog synaptic elements},
  author = {Heebum Kang and Jinah Park and Dokyung Lee and Hyun Wook Kim and Sol Jin and Minjoon Ahn and Jiyong Woo},
  year = {2021},
  doi = {10.1088/2634-4386/ac29ca},
  url = {https://doi.org/10.1088/2634-4386/ac29ca},
  researchr = {https://researchr.org/publication/KangPLKJAW21},
  cites = {0},
  citedby = {0},
  journal = {Neuromorph. Comput. Eng.},
  volume = {1},
  number = {2},
  pages = {21001},
}