Enhanced luminescence of GaN-based light-emitting diodes by selective wet etching of GaN/sapphire interface using direct heteroepitaxy laterally overgrowth technique - researchr publication references

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Chien-Chih Kao, Yan-Kuin Su, Chuing-Liang Lin, Jian-Jhong Chen. Enhanced luminescence of GaN-based light-emitting diodes by selective wet etching of GaN/sapphire interface using direct heteroepitaxy laterally overgrowth technique. Displays, 32(2):96-99, 2011. [doi]

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