Simulation-Based Power-Loss Optimization of General-Purpose High-Voltage SiC MOSFET Circuit Under High-Frequency Operation

Abhishek Kar, Mitiko Miura-Mattausch, Mainak Sengupta, Dondee Navarro, Hideyuki Kikuchihara, Takahiro Iizuka, Hafizur Rahaman 0001, Hans Jürgen Mattausch. Simulation-Based Power-Loss Optimization of General-Purpose High-Voltage SiC MOSFET Circuit Under High-Frequency Operation. IEEE Access, 9:23786-23794, 2021. [doi]

@article{KarMSNKI0M21,
  title = {Simulation-Based Power-Loss Optimization of General-Purpose High-Voltage SiC MOSFET Circuit Under High-Frequency Operation},
  author = {Abhishek Kar and Mitiko Miura-Mattausch and Mainak Sengupta and Dondee Navarro and Hideyuki Kikuchihara and Takahiro Iizuka and Hafizur Rahaman 0001 and Hans Jürgen Mattausch},
  year = {2021},
  doi = {10.1109/ACCESS.2021.3056467},
  url = {https://doi.org/10.1109/ACCESS.2021.3056467},
  researchr = {https://researchr.org/publication/KarMSNKI0M21},
  cites = {0},
  citedby = {0},
  journal = {IEEE Access},
  volume = {9},
  pages = {23786-23794},
}