Impact of source/drain doping concentration on graphene nanoribbon field effect transistor performance

Jasleen Kaur, Anita Kumari. Impact of source/drain doping concentration on graphene nanoribbon field effect transistor performance. IET Circuits, Devices & Systems, 10(6):457-462, 2016. [doi]

@article{KaurK16-2,
  title = {Impact of source/drain doping concentration on graphene nanoribbon field effect transistor performance},
  author = {Jasleen Kaur and Anita Kumari},
  year = {2016},
  doi = {10.1049/iet-cds.2016.0094},
  url = {http://dx.doi.org/10.1049/iet-cds.2016.0094},
  researchr = {https://researchr.org/publication/KaurK16-2},
  cites = {0},
  citedby = {0},
  journal = {IET Circuits, Devices & Systems},
  volume = {10},
  number = {6},
  pages = {457-462},
}