A compact model for the current in LDMOS transistors

Hojjat Keshtkar, Erfan Javadiun, Hassan Mansourghanaei. A compact model for the current in LDMOS transistors. In IEEE International Conference on Electro Information Technology, EIT 2017, Lincoln, NE, USA, May 14-17, 2017. pages 171-176, IEEE, 2017. [doi]

@inproceedings{KeshtkarJM17,
  title = {A compact model for the current in LDMOS transistors},
  author = {Hojjat Keshtkar and Erfan Javadiun and Hassan Mansourghanaei},
  year = {2017},
  doi = {10.1109/EIT.2017.8053350},
  url = {https://doi.org/10.1109/EIT.2017.8053350},
  researchr = {https://researchr.org/publication/KeshtkarJM17},
  cites = {0},
  citedby = {0},
  pages = {171-176},
  booktitle = {IEEE International Conference on Electro Information Technology, EIT 2017, Lincoln, NE, USA, May 14-17, 2017},
  publisher = {IEEE},
  isbn = {978-1-5090-4767-3},
}