Fully depleted extremely thin SOI for mainstream 20nm low-power technology and beyond

Ali Khaki-Firooz, Kangguo Cheng, Basanth Jagannathan, Pranita Kulkarni, Jeffrey W. Sleight, Davood Shahrjerdi, Josephine B. Chang, Sungjae Lee, Junjun Li, Huiming Bu, Robert Gauthier, Bruce Doris, Ghavam Shahidi. Fully depleted extremely thin SOI for mainstream 20nm low-power technology and beyond. In IEEE International Solid-State Circuits Conference, ISSCC 2010, Digest of Technical Papers, San Francisco, CA, USA, 7-11 February, 2010. pages 152-153, IEEE, 2010. [doi]

@inproceedings{Khaki-FiroozCJKSSCLLBGDS10,
  title = {Fully depleted extremely thin SOI for mainstream 20nm low-power technology and beyond},
  author = {Ali Khaki-Firooz and Kangguo Cheng and Basanth Jagannathan and Pranita Kulkarni and Jeffrey W. Sleight and Davood Shahrjerdi and Josephine B. Chang and Sungjae Lee and Junjun Li and Huiming Bu and Robert Gauthier and Bruce Doris and Ghavam Shahidi},
  year = {2010},
  doi = {10.1109/ISSCC.2010.5434014},
  url = {http://dx.doi.org/10.1109/ISSCC.2010.5434014},
  researchr = {https://researchr.org/publication/Khaki-FiroozCJKSSCLLBGDS10},
  cites = {0},
  citedby = {0},
  pages = {152-153},
  booktitle = {IEEE International Solid-State Circuits Conference, ISSCC 2010, Digest of Technical Papers, San Francisco, CA, USA, 7-11 February, 2010},
  publisher = {IEEE},
  isbn = {978-1-4244-6033-5},
}