Back-Gate GaN Nanowire-Based FET Device for Enhancing Gas Selectivity at Room Temperature

Md Ashfaque Hossain Khan, Ratan Debnath, Abhishek Motayed, Mulpuri V. Rao. Back-Gate GaN Nanowire-Based FET Device for Enhancing Gas Selectivity at Room Temperature. Sensors, 21(2):624, 2021. [doi]

@article{KhanDMR21,
  title = {Back-Gate GaN Nanowire-Based FET Device for Enhancing Gas Selectivity at Room Temperature},
  author = {Md Ashfaque Hossain Khan and Ratan Debnath and Abhishek Motayed and Mulpuri V. Rao},
  year = {2021},
  doi = {10.3390/s21020624},
  url = {https://doi.org/10.3390/s21020624},
  researchr = {https://researchr.org/publication/KhanDMR21},
  cites = {0},
  citedby = {0},
  journal = {Sensors},
  volume = {21},
  number = {2},
  pages = {624},
}