Rigorous mathematical model of through-silicon via capacitance

Kibeom Kim, Jedok Kim, Hongkyun Kim, Seungyoung Ahn. Rigorous mathematical model of through-silicon via capacitance. IET Circuits, Devices & Systems, 12(5):589-593, 2018. [doi]

@article{KimKKA18,
  title = {Rigorous mathematical model of through-silicon via capacitance},
  author = {Kibeom Kim and Jedok Kim and Hongkyun Kim and Seungyoung Ahn},
  year = {2018},
  doi = {10.1049/iet-cds.2017.0157},
  url = {https://doi.org/10.1049/iet-cds.2017.0157},
  researchr = {https://researchr.org/publication/KimKKA18},
  cites = {0},
  citedby = {0},
  journal = {IET Circuits, Devices & Systems},
  volume = {12},
  number = {5},
  pages = {589-593},
}