AlGaN/GaN HEMT device reliability and degradation evolution: Importance of diffusion processes

Martin Kuball, Milan Tapajna, Richard J. T. Simms, Mustapha Faqir, Umesh K. Mishra. AlGaN/GaN HEMT device reliability and degradation evolution: Importance of diffusion processes. Microelectronics Reliability, 51(2):195-200, 2011. [doi]

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