Sona P. Kumar, Anju Agrawal, Rishu Chaujar, R. S. Gupta, Mridula Gupta. Device linearity and intermodulation distortion comparison of dual material gate and conventional AlGaN/GaN high electron mobility transistor. Microelectronics Reliability, 51(3):587-596, 2011. [doi]
@article{KumarACGG11,
title = {Device linearity and intermodulation distortion comparison of dual material gate and conventional AlGaN/GaN high electron mobility transistor},
author = {Sona P. Kumar and Anju Agrawal and Rishu Chaujar and R. S. Gupta and Mridula Gupta},
year = {2011},
doi = {10.1016/j.microrel.2010.09.033},
url = {http://dx.doi.org/10.1016/j.microrel.2010.09.033},
researchr = {https://researchr.org/publication/KumarACGG11},
cites = {0},
citedby = {0},
journal = {Microelectronics Reliability},
volume = {51},
number = {3},
pages = {587-596},
}