Drain current modelling of double gate-all-around (DGAA) MOSFETs

Arun Kumar, Shiv Bhushan, Pramod Kumar Tiwari. Drain current modelling of double gate-all-around (DGAA) MOSFETs. IET Circuits, Devices & Systems, 13(4):519-525, 2019. [doi]

@article{KumarBT19,
  title = {Drain current modelling of double gate-all-around (DGAA) MOSFETs},
  author = {Arun Kumar and Shiv Bhushan and Pramod Kumar Tiwari},
  year = {2019},
  doi = {10.1049/iet-cds.2018.5201},
  url = {https://doi.org/10.1049/iet-cds.2018.5201},
  researchr = {https://researchr.org/publication/KumarBT19},
  cites = {0},
  citedby = {0},
  journal = {IET Circuits, Devices & Systems},
  volume = {13},
  number = {4},
  pages = {519-525},
}