Vinod Kumar, Ram Murti Rawat. Low Power Restoration Circuits Reduce Swing Voltages of SRAM Cell With Improved Read and Write Margins. Int. J. Secur. Priv. Pervasive Comput., 13(2):16-28, 2021. [doi]
@article{KumarR21-13,
title = {Low Power Restoration Circuits Reduce Swing Voltages of SRAM Cell With Improved Read and Write Margins},
author = {Vinod Kumar and Ram Murti Rawat},
year = {2021},
doi = {10.4018/ijsppc.2021040102},
url = {https://doi.org/10.4018/ijsppc.2021040102},
researchr = {https://researchr.org/publication/KumarR21-13},
cites = {0},
citedby = {0},
journal = {Int. J. Secur. Priv. Pervasive Comput.},
volume = {13},
number = {2},
pages = {16-28},
}