Double Gate TFET Simulation with Different Gate Oxides and Thickness

Pavan Kumar, Kosaraju Sivani. Double Gate TFET Simulation with Different Gate Oxides and Thickness. In 14th International Conference on Computing Communication and Networking Technologies, ICCCNT 2023, Delhi, India, July 6-8, 2023. pages 1-4, IEEE, 2023. [doi]

@inproceedings{KumarS23c-0,
  title = {Double Gate TFET Simulation with Different Gate Oxides and Thickness},
  author = {Pavan Kumar and Kosaraju Sivani},
  year = {2023},
  doi = {10.1109/ICCCNT56998.2023.10306835},
  url = {https://doi.org/10.1109/ICCCNT56998.2023.10306835},
  researchr = {https://researchr.org/publication/KumarS23c-0},
  cites = {0},
  citedby = {0},
  pages = {1-4},
  booktitle = {14th International Conference on Computing Communication and Networking Technologies, ICCCNT 2023, Delhi, India, July 6-8, 2023},
  publisher = {IEEE},
  isbn = {979-8-3503-3509-5},
}