K. C. Kwong, Philip K. T. Mok, Mansun Chan. Geometry based resistance model for phase change memory. In Proceedings of the 2012 European Solid-State Device Research Conference, ESSDERC 2012, Bordeaux, France, September 17-21, 2012. pages 101-104, IEEE, 2012. [doi]
@inproceedings{KwongMC12, title = {Geometry based resistance model for phase change memory}, author = {K. C. Kwong and Philip K. T. Mok and Mansun Chan}, year = {2012}, doi = {10.1109/ESSDERC.2012.6343343}, url = {http://dx.doi.org/10.1109/ESSDERC.2012.6343343}, researchr = {https://researchr.org/publication/KwongMC12}, cites = {0}, citedby = {0}, pages = {101-104}, booktitle = {Proceedings of the 2012 European Solid-State Device Research Conference, ESSDERC 2012, Bordeaux, France, September 17-21, 2012}, publisher = {IEEE}, isbn = {978-1-4673-1707-8}, }