Abderrazak Lakrim, Driss Tahri. The DC behavioural electrothermal model of silicon carbide power MOSFETs under SPICE. In IEEE International Conference on Industrial Technology, ICIT 2015, Seville, Spain, March 17-19, 2015. pages 2818-2823, IEEE, 2015. [doi]
@inproceedings{LakrimT15,
title = {The DC behavioural electrothermal model of silicon carbide power MOSFETs under SPICE},
author = {Abderrazak Lakrim and Driss Tahri},
year = {2015},
doi = {10.1109/ICIT.2015.7125514},
url = {https://doi.org/10.1109/ICIT.2015.7125514},
researchr = {https://researchr.org/publication/LakrimT15},
cites = {0},
citedby = {0},
pages = {2818-2823},
booktitle = {IEEE International Conference on Industrial Technology, ICIT 2015, Seville, Spain, March 17-19, 2015},
publisher = {IEEE},
isbn = {978-1-4799-7800-7},
}