A 28-GHz 28.5-dBm power amplifier using 0.15-µm InGaAs E-mode pHEMT technology

Hui Dong Lee, Sunwoo Kong, Bonghyuk Park, Kwang Chun Lee, Jeong-Soo Park, Jeong Geun Kim. A 28-GHz 28.5-dBm power amplifier using 0.15-µm InGaAs E-mode pHEMT technology. In International SoC Design Conference, ISOCC 2018, Daegu, South Korea, November 12-15, 2018. pages 257-258, IEEE, 2018. [doi]

@inproceedings{LeeKPLPK18,
  title = {A 28-GHz 28.5-dBm power amplifier using 0.15-µm InGaAs E-mode pHEMT technology},
  author = {Hui Dong Lee and Sunwoo Kong and Bonghyuk Park and Kwang Chun Lee and Jeong-Soo Park and Jeong Geun Kim},
  year = {2018},
  doi = {10.1109/ISOCC.2018.8649905},
  url = {https://doi.org/10.1109/ISOCC.2018.8649905},
  researchr = {https://researchr.org/publication/LeeKPLPK18},
  cites = {0},
  citedby = {0},
  pages = {257-258},
  booktitle = {International SoC Design Conference, ISOCC 2018, Daegu, South Korea, November 12-15, 2018},
  publisher = {IEEE},
  isbn = {978-1-5386-7960-9},
}