Hochul Lee, Youngchang Yoon, Seongjae Cho, Hyungcheol Shin. Accurate Extraction of the Trap Depth from RTS Noise Data by Including Poly Depletion Effect and Surface Potential Variation in MOSFETs. IEICE Transactions, 90-C(5):968-972, 2007. [doi]
@article{LeeYCS07,
title = {Accurate Extraction of the Trap Depth from RTS Noise Data by Including Poly Depletion Effect and Surface Potential Variation in MOSFETs},
author = {Hochul Lee and Youngchang Yoon and Seongjae Cho and Hyungcheol Shin},
year = {2007},
doi = {10.1093/ietele/e90-c.5.968},
url = {http://dx.doi.org/10.1093/ietele/e90-c.5.968},
researchr = {https://researchr.org/publication/LeeYCS07},
cites = {0},
citedby = {0},
journal = {IEICE Transactions},
volume = {90-C},
number = {5},
pages = {968-972},
}