Bit-line Sense Amplifier Using PMOS Charge Transfer Pre-amplifier for Low-Voltage DRAM

Choong Keun Lee, Taegun Yim, Hongil Yoon. Bit-line Sense Amplifier Using PMOS Charge Transfer Pre-amplifier for Low-Voltage DRAM. In TENCON 2018 - 2018 IEEE Region 10 Conference, Jeju, South Korea, October 28-31, 2018. pages 1357-1361, IEEE, 2018. [doi]

@inproceedings{LeeYY18-0,
  title = {Bit-line Sense Amplifier Using PMOS Charge Transfer Pre-amplifier for Low-Voltage DRAM},
  author = {Choong Keun Lee and Taegun Yim and Hongil Yoon},
  year = {2018},
  doi = {10.1109/TENCON.2018.8650337},
  url = {https://doi.org/10.1109/TENCON.2018.8650337},
  researchr = {https://researchr.org/publication/LeeYY18-0},
  cites = {0},
  citedby = {0},
  pages = {1357-1361},
  booktitle = {TENCON 2018 - 2018 IEEE Region 10 Conference, Jeju, South Korea, October 28-31, 2018},
  publisher = {IEEE},
  isbn = {978-1-5386-5457-6},
}