Yiming Lei, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Masayuki Furuhashi, Shingo Tomohisa, Satoshi Yamakawa, Kuniyuki Kakushima. Effect of lanthanum silicate interface layer on the electrical characteristics of 4H-SiC metal-oxide-semiconductor capacitors. Microelectronics Reliability, 84:248-252, 2018. [doi]
@article{LeiWTIFTYK18a,
title = {Effect of lanthanum silicate interface layer on the electrical characteristics of 4H-SiC metal-oxide-semiconductor capacitors},
author = {Yiming Lei and Hitoshi Wakabayashi and Kazuo Tsutsui and Hiroshi Iwai and Masayuki Furuhashi and Shingo Tomohisa and Satoshi Yamakawa and Kuniyuki Kakushima},
year = {2018},
doi = {10.1016/j.microrel.2018.03.037},
url = {https://doi.org/10.1016/j.microrel.2018.03.037},
researchr = {https://researchr.org/publication/LeiWTIFTYK18a},
cites = {0},
citedby = {0},
journal = {Microelectronics Reliability},
volume = {84},
pages = {248-252},
}