Davide Lena, Irene Buraioli, Alberto Bocca, Danilo Demarchi, Alberto Macii. An accurate electro-thermal model of SiC power mosfets for fast simulations. In IEEE International Conference on Industrial Technology, ICIT 2018, Lyon, France, February 20-22, 2018. pages 623-628, IEEE, 2018. [doi]
@inproceedings{LenaBBDM18,
title = {An accurate electro-thermal model of SiC power mosfets for fast simulations},
author = {Davide Lena and Irene Buraioli and Alberto Bocca and Danilo Demarchi and Alberto Macii},
year = {2018},
doi = {10.1109/ICIT.2018.8352250},
url = {https://doi.org/10.1109/ICIT.2018.8352250},
researchr = {https://researchr.org/publication/LenaBBDM18},
cites = {0},
citedby = {0},
pages = {623-628},
booktitle = {IEEE International Conference on Industrial Technology, ICIT 2018, Lyon, France, February 20-22, 2018},
publisher = {IEEE},
isbn = {978-1-5090-5949-2},
}