Source engineering on ruggedness and RF performance of n-channel RFLDMOS

Hao Li 0012, Mifang Cong, Ke Li, Huan Du. Source engineering on ruggedness and RF performance of n-channel RFLDMOS. Microelectronics Reliability, 87:57-63, 2018. [doi]

@article{LiCLD18,
  title = {Source engineering on ruggedness and RF performance of n-channel RFLDMOS},
  author = {Hao Li 0012 and Mifang Cong and Ke Li and Huan Du},
  year = {2018},
  doi = {10.1016/j.microrel.2018.06.001},
  url = {https://doi.org/10.1016/j.microrel.2018.06.001},
  researchr = {https://researchr.org/publication/LiCLD18},
  cites = {0},
  citedby = {0},
  journal = {Microelectronics Reliability},
  volume = {87},
  pages = {57-63},
}