Yiming Li, Chih-Hong Hwang, Shao-Ming Yu. Numerical Simulation of Static Noise Margin for a Six-Transistor Static Random Access Memory Cell with 32nm Fin-Typed Field Effect Transistors. In Yong Shi, G. Dick van Albada, Jack Dongarra, Peter M. A. Sloot, editors, Computational Science - ICCS 2007, 7th International Conference, Beijing, China, May 27 - 30, 2007, Proceedings, Part IV. Volume 4490 of Lecture Notes in Computer Science, pages 227-234, Springer, 2007. [doi]
@inproceedings{LiHY07:0,
title = {Numerical Simulation of Static Noise Margin for a Six-Transistor Static Random Access Memory Cell with 32nm Fin-Typed Field Effect Transistors},
author = {Yiming Li and Chih-Hong Hwang and Shao-Ming Yu},
year = {2007},
doi = {10.1007/978-3-540-72590-9_33},
url = {http://dx.doi.org/10.1007/978-3-540-72590-9_33},
researchr = {https://researchr.org/publication/LiHY07%3A0},
cites = {0},
citedby = {0},
pages = {227-234},
booktitle = {Computational Science - ICCS 2007, 7th International Conference, Beijing, China, May 27 - 30, 2007, Proceedings, Part IV},
editor = {Yong Shi and G. Dick van Albada and Jack Dongarra and Peter M. A. Sloot},
volume = {4490},
series = {Lecture Notes in Computer Science},
publisher = {Springer},
isbn = {978-3-540-72589-3},
}