Xueyang Li, Gang Xie, Cen Tang, Kuang Sheng. Charge trapping related channel modulation instability in P-GaN gate HEMTs. Microelectronics Reliability, 65:35-40, 2016. [doi]
@article{LiXTS16,
title = {Charge trapping related channel modulation instability in P-GaN gate HEMTs},
author = {Xueyang Li and Gang Xie and Cen Tang and Kuang Sheng},
year = {2016},
doi = {10.1016/j.microrel.2016.07.040},
url = {http://dx.doi.org/10.1016/j.microrel.2016.07.040},
researchr = {https://researchr.org/publication/LiXTS16},
cites = {0},
citedby = {0},
journal = {Microelectronics Reliability},
volume = {65},
pages = {35-40},
}