High-voltage nLDMOS Drain Side Schottky/SCR Modulations for Enhancement Reliability Capabilities - researchr publication authors

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Ting-En Lin, Shen-Li Chen, Zhi-Wei Liu, Xing-Chen Mai, Xiu-Yuan Yang, Yu-Jie Chung. High-voltage nLDMOS Drain Side Schottky/SCR Modulations for Enhancement Reliability Capabilities. In International Conference on Consumer Electronics - Taiwan, ICCE-Taiwan 2023, PingTung, Taiwan, July 17-19, 2023. pages 225-226, IEEE, 2023. [doi]

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