7.4 A 256b-wordlength ReRAM-based TCAM with 1ns search-time and 14× improvement in wordlength-energyefficiency-density product using 2.5T1R cell

Chien-Chen Lin, Jui-Yu Hung, Wen-Zhang Lin, Chieh-Pu Lo, Yen-Ning Chiang, Hsiang-Jen Tsai, Geng-Hau Yang, Ya-Chin King, Chrong Jung Lin, Tien-Fu Chen, Meng-Fan Chang. 7.4 A 256b-wordlength ReRAM-based TCAM with 1ns search-time and 14× improvement in wordlength-energyefficiency-density product using 2.5T1R cell. In 2016 IEEE International Solid-State Circuits Conference, ISSCC 2016, San Francisco, CA, USA, January 31 - February 4, 2016. pages 136-137, IEEE, 2016. [doi]

Authors

Chien-Chen Lin

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Jui-Yu Hung

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Wen-Zhang Lin

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Chieh-Pu Lo

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Yen-Ning Chiang

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Hsiang-Jen Tsai

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Geng-Hau Yang

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Ya-Chin King

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Chrong Jung Lin

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Tien-Fu Chen

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Meng-Fan Chang

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