Half-Select Disturb-Free 10T Tunnel FET SRAM Cell With Improved Noise Margin and Low Power Consumption - researchr publication authors

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Zhiting Lin, Luanyun Li, Xiulong Wu, Chunyu Peng, Wenjuan Lu, Qiang Zhao. Half-Select Disturb-Free 10T Tunnel FET SRAM Cell With Improved Noise Margin and Low Power Consumption. IEEE Trans. Circuits Syst. II Express Briefs, 68(7):2628-2632, 2021. [doi]

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