High mobility germanium-on-insulator p-channel FinFETs

Huan Liu, Genquan Han, Jiuren Zhou, Yan Liu, Yue Hao. High mobility germanium-on-insulator p-channel FinFETs. Science in China Series F: Information Sciences, 64(4), 2021. [doi]

@article{LiuHZLH21,
  title = {High mobility germanium-on-insulator p-channel FinFETs},
  author = {Huan Liu and Genquan Han and Jiuren Zhou and Yan Liu and Yue Hao},
  year = {2021},
  doi = {10.1007/s11432-019-2846-9},
  url = {https://doi.org/10.1007/s11432-019-2846-9},
  researchr = {https://researchr.org/publication/LiuHZLH21},
  cites = {0},
  citedby = {0},
  journal = {Science in China Series F: Information Sciences},
  volume = {64},
  number = {4},
}