Meng Liu, Yu Wu, Xintian Zhou, Jie Cao, Lei Sun, Lihao Wang. Superior Static Electrical Characteristics of a 650-V 4H-SiC Accumulation-Mode MOS Channel Diode. In EITCE 2020: 4th International Conference on Electronic Information Technology and Computer Engineering, Xiamen, China, 6 November, 2020 - 8 November, 2020. pages 1065-1069, ACM, 2020. [doi]
@inproceedings{LiuWZCSW20,
title = {Superior Static Electrical Characteristics of a 650-V 4H-SiC Accumulation-Mode MOS Channel Diode},
author = {Meng Liu and Yu Wu and Xintian Zhou and Jie Cao and Lei Sun and Lihao Wang},
year = {2020},
doi = {10.1145/3443467.3443905},
url = {https://doi.org/10.1145/3443467.3443905},
researchr = {https://researchr.org/publication/LiuWZCSW20},
cites = {0},
citedby = {0},
pages = {1065-1069},
booktitle = {EITCE 2020: 4th International Conference on Electronic Information Technology and Computer Engineering, Xiamen, China, 6 November, 2020 - 8 November, 2020},
publisher = {ACM},
isbn = {978-1-4503-8781-1},
}