High energy proton and heavy ion induced single event transient in 65-nm CMOS technology - researchr publication authors

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Jiaqi Liu, Yuanfu Zhao, Liang Wang, Dan Wang, Hongchao Zheng, Maoxin Chen, Lei Shu, Tongde Li, Dongqiang Li, Wei Guo. High energy proton and heavy ion induced single event transient in 65-nm CMOS technology. Science in China Series F: Information Sciences, 60(12), 2017. [doi]

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