Richard Lossy, Hervé Blanck, Joachim Würfl. Reliability studies on GaN HEMTs with sputtered Iridium gate module. Microelectronics Reliability, 52(9-10):2144-2148, 2012. [doi]
@article{LossyBW12, title = {Reliability studies on GaN HEMTs with sputtered Iridium gate module}, author = {Richard Lossy and Hervé Blanck and Joachim Würfl}, year = {2012}, doi = {10.1016/j.microrel.2012.06.154}, url = {http://dx.doi.org/10.1016/j.microrel.2012.06.154}, researchr = {https://researchr.org/publication/LossyBW12}, cites = {0}, citedby = {0}, journal = {Microelectronics Reliability}, volume = {52}, number = {9-10}, pages = {2144-2148}, }