Impact of Ferroelectric Layer Thickness on Negative Capacitance Mosfets - researchr publication authors

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Wei-feng Lü, Liang Dai, Mi Lin, Haipeng Zhang. Impact of Ferroelectric Layer Thickness on Negative Capacitance Mosfets. In Antonio J. Tallón-Ballesteros, Kaicheng Li, editors, Fuzzy Systems and Data Mining IV - Proceedings of FSDM 2018, Bangkok, Thailand, 16-19 November 2018. Volume 309 of Frontiers in Artificial Intelligence and Applications, pages 898-903, IOS Press, 2018. [doi]

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