A Circuit Level Fault Model for Resistive Shorts of MOS Gate Oxide - researchr publication authors

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Xiang Lu, Zhuo Li, Wangqi Qiu, D. M. H. Walker, Weiping Shi. A Circuit Level Fault Model for Resistive Shorts of MOS Gate Oxide. In Fifth International Workshop on Microprocessor Test and Verification (MTV 2004), Common Challenges and Solutions, 08-10 September 2004, Austin, Texas, USA. pages 97-102, IEEE Computer Society, 2004. [doi]

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