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Conduction band states of transition metal (TM) high-k gate dielectrics as determined from X-ray absorption spectra

Gerald Lucovsky, J. G. Hong, C. C. Fulton, N. A. Stoute, Y. Zou, R. J. Nemanich, D. E. Aspnes, H. Ade, D. G. Schlom. Conduction band states of transition metal (TM) high-k gate dielectrics as determined from X-ray absorption spectra. Microelectronics Reliability, 45(5-6):827-830, 2005. [doi]

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Gerald Lucovsky

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J. G. Hong

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C. C. Fulton

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N. A. Stoute

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Y. Zou

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R. J. Nemanich

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D. E. Aspnes

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H. Ade

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D. G. Schlom

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