Design and Optimization of N-type SiC Gate Turn-off Thyristor with High Turn-off Gain and High Breakdown Voltage - researchr publication authors

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Hongming Ma, Yan Wang. Design and Optimization of N-type SiC Gate Turn-off Thyristor with High Turn-off Gain and High Breakdown Voltage. In International Conference on IC Design and Technology, ICICDT 2021, Dresden, Germany, September 15-17, 2021. pages 1-4, IEEE, 2021. [doi]

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