A physical based model to predict performance degradation of FinFET accounting for interface state distribution effect due to hot carrier injection

Chenyue Ma, Lining Zhang, Chenfei Zhang, Xiufang Zhang, Jin He, Xing Zhang. A physical based model to predict performance degradation of FinFET accounting for interface state distribution effect due to hot carrier injection. Microelectronics Reliability, 51(2):337-341, 2011. [doi]

@article{MaZZZHZ11,
  title = {A physical based model to predict performance degradation of FinFET accounting for interface state distribution effect due to hot carrier injection},
  author = {Chenyue Ma and Lining Zhang and Chenfei Zhang and Xiufang Zhang and Jin He and Xing Zhang},
  year = {2011},
  doi = {10.1016/j.microrel.2010.08.023},
  url = {http://dx.doi.org/10.1016/j.microrel.2010.08.023},
  tags = {rule-based},
  researchr = {https://researchr.org/publication/MaZZZHZ11},
  cites = {0},
  citedby = {0},
  journal = {Microelectronics Reliability},
  volume = {51},
  number = {2},
  pages = {337-341},
}