A simulation study of the effect of ferroelectric thickness and oxide variation on the performance of Highly Doped Double Pocket Double Gate NCFET based inverter - researchr publication authors

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Malvika, Jagritee Talukdar, Bijit Choudhuri, Kavicharan Mummaneni. A simulation study of the effect of ferroelectric thickness and oxide variation on the performance of Highly Doped Double Pocket Double Gate NCFET based inverter. In IEEE International Symposium on Smart Electronic Systems, iSES 2022, Warangal, India, December 18-22, 2022. pages 601-604, IEEE, 2022. [doi]

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