Keita Matsuda, Takeshi Kawasaki, Ken Nakata, Takeshi Igarashi, Seiji Yaegassi. Low Leakage Current ITO Schottky Electrodes for AlGaN/GaN HEMTs. IEICE Transactions, 91-C(7):1015-1019, 2008. [doi]
@article{MatsudaKNIY08,
title = {Low Leakage Current ITO Schottky Electrodes for AlGaN/GaN HEMTs},
author = {Keita Matsuda and Takeshi Kawasaki and Ken Nakata and Takeshi Igarashi and Seiji Yaegassi},
year = {2008},
doi = {10.1093/ietele/e91-c.7.1015},
url = {http://dx.doi.org/10.1093/ietele/e91-c.7.1015},
researchr = {https://researchr.org/publication/MatsudaKNIY08},
cites = {0},
citedby = {0},
journal = {IEICE Transactions},
volume = {91-C},
number = {7},
pages = {1015-1019},
}