The following publications are possibly variants of this publication:
- New Approach to Hot Electron Effects in Si-MOSFETs Based on an Evolutionary Algorithm Using a Monte Carlo Like Mutation OperatorJürgen Jakumeit, Umberto Ravaioli, Karl Hess. vlsi, 1998(1):307-311, 1998. [doi]
- Electron Mobility and Monte Carlo device simulation of MOSFETsS. Yamakawa, H. Ueno, Kotaro Taniguchi, C. Hamaguchi, K. Miyatsuji, K. Masaki, U. Ravaioli. vlsi, 1998(1):27-30, 1998. [doi]
- Evolutionary Algorithms for the Calculation of Electron Distributions in Si-MOSFETsJürgen Jakumeit. ppsn 1996: 819-828