Mahmood Uddin Mohammed, Nahid M. Hossain, Masud H. Chowdhury. A Disturb Free Read Port 8T SRAM Bitcell Circuit Design with Virtual Ground Scheme. In IEEE 61st International Midwest Symposium on Circuits and Systems, MWSCAS 2018, Windsor, ON, Canada, August 5-8, 2018. pages 412-415, IEEE, 2018. [doi]
@inproceedings{MohammedHC18,
title = {A Disturb Free Read Port 8T SRAM Bitcell Circuit Design with Virtual Ground Scheme},
author = {Mahmood Uddin Mohammed and Nahid M. Hossain and Masud H. Chowdhury},
year = {2018},
doi = {10.1109/MWSCAS.2018.8624107},
url = {https://doi.org/10.1109/MWSCAS.2018.8624107},
researchr = {https://researchr.org/publication/MohammedHC18},
cites = {0},
citedby = {0},
pages = {412-415},
booktitle = {IEEE 61st International Midwest Symposium on Circuits and Systems, MWSCAS 2018, Windsor, ON, Canada, August 5-8, 2018},
publisher = {IEEE},
isbn = {978-1-5386-7392-8},
}