Design of experiments and integer linear programming-assisted conjugate-gradient optimisation of high-κ/metal-gate nano-complementary metal-oxide semiconductor static random access memory

Saraju P. Mohanty, Elias Kougianos. Design of experiments and integer linear programming-assisted conjugate-gradient optimisation of high-κ/metal-gate nano-complementary metal-oxide semiconductor static random access memory. IET Computers & Digital Techniques, 6(4):240-248, 2012. [doi]

@article{MohantyK12,
  title = {Design of experiments and integer linear programming-assisted conjugate-gradient optimisation of high-κ/metal-gate nano-complementary metal-oxide semiconductor static random access memory},
  author = {Saraju P. Mohanty and Elias Kougianos},
  year = {2012},
  doi = {10.1049/iet-cdt.2011.0166},
  url = {http://doi.ieeecomputersociety.org/10.1049/iet-cdt.2011.0166},
  researchr = {https://researchr.org/publication/MohantyK12},
  cites = {0},
  citedby = {0},
  journal = {IET Computers & Digital Techniques},
  volume = {6},
  number = {4},
  pages = {240-248},
}