Measurement and analysis of SiC-MOSFET threshold voltage shift

Q. Molin, M. Kanoun, C. Raynaud, Hervé Morel. Measurement and analysis of SiC-MOSFET threshold voltage shift. Microelectronics Reliability, 88:656-660, 2018. [doi]

Authors

Q. Molin

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M. Kanoun

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C. Raynaud

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Hervé Morel

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