Seyed Yahya Mortazavi, Kwang-Jin Koh. 14.4 A Class F-1/F 24-to-31GHz power amplifier with 40.7% peak PAE, 15dBm OP1dB, and 50mW Psat in 0.13μm SiGe BiCMOS. In 2014 IEEE International Conference on Solid-State Circuits Conference, ISSCC 2014, Digest of Technical Papers, San Francisco, CA, USA, February 9-13, 2014. pages 254-255, IEEE, 2014. [doi]
@inproceedings{MortazaviK14,
title = {14.4 A Class F-1/F 24-to-31GHz power amplifier with 40.7% peak PAE, 15dBm OP1dB, and 50mW Psat in 0.13μm SiGe BiCMOS},
author = {Seyed Yahya Mortazavi and Kwang-Jin Koh},
year = {2014},
doi = {10.1109/ISSCC.2014.6757423},
url = {https://doi.org/10.1109/ISSCC.2014.6757423},
researchr = {https://researchr.org/publication/MortazaviK14},
cites = {0},
citedby = {0},
pages = {254-255},
booktitle = {2014 IEEE International Conference on Solid-State Circuits Conference, ISSCC 2014, Digest of Technical Papers, San Francisco, CA, USA, February 9-13, 2014},
publisher = {IEEE},
isbn = {978-1-4799-0918-6},
}