Magnetic characterization of AlGaN/GaN/Si high electron mobility transistors

Hana Mosbahi, Khaoula Hergli. Magnetic characterization of AlGaN/GaN/Si high electron mobility transistors. In International Conference on Control, Automation and Diagnosis, ICCAD 2023, Rome, Italy, May 10-12, 2023. pages 1-2, IEEE, 2023. [doi]

@inproceedings{MosbahiH23,
  title = {Magnetic characterization of AlGaN/GaN/Si high electron mobility transistors},
  author = {Hana Mosbahi and Khaoula Hergli},
  year = {2023},
  doi = {10.1109/ICCAD57653.2023.10152314},
  url = {https://doi.org/10.1109/ICCAD57653.2023.10152314},
  researchr = {https://researchr.org/publication/MosbahiH23},
  cites = {0},
  citedby = {0},
  pages = {1-2},
  booktitle = {International Conference on Control, Automation and Diagnosis, ICCAD 2023, Rome, Italy, May 10-12, 2023},
  publisher = {IEEE},
  isbn = {979-8-3503-4707-4},
}