Calculating electronic properties of the Si: SiO2 interface using density functional theory with periodical boundary condition

Jeffery D. Mottishaw, Mukul Dubey, Dmitri Kilin, Qi Hua Fan, Haoran Sun. Calculating electronic properties of the Si: SiO2 interface using density functional theory with periodical boundary condition. In IEEE International Conference on Electro-Information Technology , EIT 2013, Rapid City, SD, USA, May 9-11, 2013. pages 1-6, IEEE, 2013. [doi]

@inproceedings{MottishawDKFS13,
  title = {Calculating electronic properties of the Si: SiO2 interface using density functional theory with periodical boundary condition},
  author = {Jeffery D. Mottishaw and Mukul Dubey and Dmitri Kilin and Qi Hua Fan and Haoran Sun},
  year = {2013},
  doi = {10.1109/EIT.2013.6632685},
  url = {http://dx.doi.org/10.1109/EIT.2013.6632685},
  researchr = {https://researchr.org/publication/MottishawDKFS13},
  cites = {0},
  citedby = {0},
  pages = {1-6},
  booktitle = {IEEE International Conference on Electro-Information Technology , EIT 2013, Rapid City, SD, USA, May 9-11, 2013},
  publisher = {IEEE},
}