Bai Na, Xuan Chen, Yang Jun, Longxin Shi. A differential read subthreshold SRAM bitcell with self-adaptive leakage cut off scheme. In Thomas Büchner, Ramalingam Sridhar, Andrew Marshall, Norbert Schuhmann, editors, Annual IEEE International SoC Conference, SoCC 2010, September 27-29, 2010, Las Vegas, NV, USA, Proceedings. pages 455-460, IEEE, 2010. [doi]
@inproceedings{NaCJS10,
title = {A differential read subthreshold SRAM bitcell with self-adaptive leakage cut off scheme},
author = {Bai Na and Xuan Chen and Yang Jun and Longxin Shi},
year = {2010},
doi = {10.1109/SOCC.2010.5784678},
url = {http://dx.doi.org/10.1109/SOCC.2010.5784678},
researchr = {https://researchr.org/publication/NaCJS10},
cites = {0},
citedby = {0},
pages = {455-460},
booktitle = {Annual IEEE International SoC Conference, SoCC 2010, September 27-29, 2010, Las Vegas, NV, USA, Proceedings},
editor = {Thomas Büchner and Ramalingam Sridhar and Andrew Marshall and Norbert Schuhmann},
publisher = {IEEE},
isbn = {978-1-4244-6682-5},
}